Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors
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Energy band alignment with barrier heights at the as-grown (1.8 eV),... | Download Scientific Diagram
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Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States | ACS Nano
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Micro | Free Full-Text | Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs
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